SGSF313XI

The SGSF313XI is high voltage NPN FASTSWITCHING transistors designed to be used as switch in high efficency OFF-LINE switching power supplies for consumer applications like sets VCR's and monitors. The feature of SGSF313XI are as follows: (1)high voltage capability; (2)very high switching speed: tf = 35ns, typical at IC= 2.5A, IB1 = 0.5A, VBEoff = -5V; (3)low saturation voltage; (4)complete characterization at 100; (5)U.L. recognised ISOWATT220 package.

The absolute maximum ratings of the SGSF313XI are: (1)collector to base voltage: 1000 V ; (2)collector to emitter voltage: 1000 V ; (3)collector-to-Emitter Voltage: 450 V ; (4)emitter to base voltage: 10 V ; (5)collector Current (Pulse): 7 A ; (6)collector current: 10 A ; (7)base current: 3 A ; (8)Base current-Peak: 6 A ; (9)total power dissipation@TC=25: 70 W ; (10)junction temperature: 150 ; (11)storage temperature: -65to~150 .

The following is about the electrical characteristics of SGSF313XI: (1)collector cut-off current(VBE = 0): 10A max at VCE = 1000V, 100A at VCE = 1000V, Tj = 125; (2)collector cut-off current(IB = 0): 100A at VEC = 450V; (3)collector-emitter sustaining voltage: 450V min at IC = 100mA, L = 25mH; (4)collector-emitter saturation voltage: 0.5V min at IC = 1A, IB = 0.1A; (5)base-emitter saturation voltage: 1.1V max at IC = 1A, IB = 0.1A; (6)DC current gain: 15 min, 30 typical and 45 max at IC = 1A, VCE = 5V; (7)RESISTIVE LOAD turn-on time: 0.5s typical and 1s max at IB1 = 0.5A, IB2 = -1A; (8)INDUCTIVE LOAD storage time: 1s typical and 2s max at VBE(off) = -5V, RBB = 2.