Features: · SGS-THOMSON PREFERRED SALESTYPE· NPN TRANSISTOR· HIGH VOLTAGE CAPABILITY· VERY HIGH SWITCHING SPEEDApplication· SWITCH MODE POWER SUPPLIESSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1200 V VCEO Collector-Emitter Voltag...
SGSF324: Features: · SGS-THOMSON PREFERRED SALESTYPE· NPN TRANSISTOR· HIGH VOLTAGE CAPABILITY· VERY HIGH SWITCHING SPEEDApplication· SWITCH MODE POWER SUPPLIESSpecifications Symbol Parameter Value ...
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| Symbol | Parameter |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage (VBE = 0) |
1200 |
V |
| VCEO | Collector-Emitter Voltage (IB = 0) |
600 |
V |
| VEBO | Emitter-Base Voltage (IC = 0) |
7 |
V |
| IC | Collector Current |
4 |
A |
| ICM | Collector Peak Current(tp < 5 ms) |
8 |
A |
| IB | Base Current |
3 |
A |
| IBM | Base Peak Current (tp < 5 ms) |
6 |
A |
| Ptot | Total Dissipation at Tc = 25 |
70 |
W |
| Tstg | Storage Temperature |
-65 to 150 |
|
| Tj | Max. Operating Junction Temperature |
150 |
The SGSF324 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors.