SGSF344

The SGSF344 is designed as a high voltage fast switching NPN power transistor which is manufactured using multiepitaxial mesa technology for cost-effective high performance and uses a hollow emitter structure to enhance switching speeds. Its typical applications include switching mode power supplies, horizontal deflection for colour TVS and monitors.

SGSF344 has three features. (1)High voltage capability. (2)Very high switching speed. (3)Low base-drive requirements. Those are all the main features.

Some absolute maximum ratings SGSF344 have been concluded into several points as follow. (1)Its collector to emitter voltage Vbe=0 would be 1200V. (2)Its collector to emitter voltage Ib=0 would be 600V. (3)Its emitter to base voltage Ic=0 would be 7V. (4)Its collector current would be 7A. (5)Its collector peak current tp<5ms would be 12A. (6)Its base current would be 5A. (7)Its base peak current tp<5ms would be 8A. (8)Its total dissipation at Tc=25°C would be 85W. (9)Its storage temperature range would be from -65°C to 150°C. (10)Its max operating junction temperature would be 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics SGSF344 are concluded as follow. (1)Its collector cut-off current Vbe=0 would be max 200uA. (2)Its collector cut-off current Ib=0 would be max 200uA at Vec=380V and would be max 2mA at Vec=600V. (3)Its emitter cutoff current Ic=0 would be max 1mA. (4)Its collector to emitter sustaining voltage would be min 600V. (5)Its collector to emitter saturation voltage would be max 1.5V. (6)Its base to emitter saturation voltage would be max 1.5V. (7)Its turn on time would be typ 0.7us and max 1.2us. (8)Its storage time would be typ 2.2us and max 3.5us. (9)Its fall time would be typ 0.18us and max 0.4us. And so on. If you have any question or suggestion or want to know more information about the SGSF344 please contact us for details. Thank you!