SI1304DL-T1-E3

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.35 Ohms
Package / Case : SOT-323-3
Continuous Drain Current : 0.7 A


Pinout




Description

The SI1304DL-T1-E3 is designed as one kind of N-channel 25-V (D-S) MOSFER. The absolute maximum ratings of the SI1304DL-T1-E3 can be summarized as:(1)Drain-Source Voltage: 25 V;(2)Gate-Source Voltage: +/- 8 V;(3)Continuous Drain Current (TJ = 150 ) TA = 25: 0.75 or 0.70 A;(4)Continuous Drain Current (TJ = 150 ) TA = 70: 0.60 or 0.56 A;(5)Pulsed Drain Current: 3.0 A;(6)Continuous Source Current (diode conduction): 0.28 or 0.24 A;(7)Operating Junction and Storage Temperature Range: 55 to 150 ;(8)Gate-Source ESD Rating (HBM, Method 3015): 2000 V.

The electrical characteristics of SI1304DL-T1-E3 can be summarized as:(1)Gate-Threshold Voltage: 0.6 to 1.3 V;(2)Gate-Body Leakage: +/- 100 nA;(3)Zero Gate Voltage Drain Current: 1 or 5 uA;(4)On-State Drain Current: 3.0 A;(5)Forward Transconductance: 1.5 s;(6)Diode Forward Voltage: 0.80 to 1.2 V. If you want to know more information about SI1304DL-T1-E3, please download the datasheet in www.seekic.com or www.chinaicmart.com .