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SI1402DH-T1-GE3

MOSFET N-CH 30V 2.7A SOT363

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SeekIC No. : 003430817 Detail

SI1402DH-T1-GE3: MOSFET N-CH 30V 2.7A SOT363

SI1402DH-T1-GE3 Data Sheet

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Part Number:
SI1402DH-T1-GE3
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) @ Vgs: 4.5nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: -
Power - Max: 950mW Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25° C: 2.7A
Gate Charge (Qg) @ Vgs: 4.5nC @ 4.5V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power - Max: 950mW
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V


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