Position: Home  > All Categories> Integrated Circuits (ICs) > SI1417EDH-T1-GE3

SI1417EDH-T1-GE3

MOSFET P-CH 12V SC-70-6

product image

SI1417EDH-T1-GE3 Picture
See larger image
SeekIC No. : 003431508 Detail

SI1417EDH-T1-GE3: MOSFET P-CH 12V SC-70-6

SI1417EDH-T1-GE3 Data Sheet

floor Price/Ceiling Price

US $ .16~.4 / Piece | Get Latest Price
Part Number:
SI1417EDH-T1-GE3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.4
  • $.31
  • $.27
  • $.23
  • $.2
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) @ Vgs: 8nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: -
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6    

Description

Manufacturer: Vishay Siliconix
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Input Capacitance (Ciss) @ Vds: -
Series: TrenchFET®
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 450mV @ 250µA
Current - Continuous Drain (Id) @ 25° C: 2.7A
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) @ Vgs: 8nC @ 4.5V
Power - Max: 1W
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Audio Products
HUC1002
WM-64CT
RF and RFID
X3C26P1-30S
1P620S
Transformers
TM-09210
BV222-1-00992
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
View more