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SI2302DS

Features: TrenchMOS™ technologyVery fast switchingLogic level compatibleSubminiature surface mount package.Application· Battery management· High speed switch· Low power DC to DC converter.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC...

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SeekIC No. : 004489968 Detail

SI2302DS: Features: TrenchMOS™ technologyVery fast switchingLogic level compatibleSubminiature surface mount package.Application· Battery management· High speed switch· Low power DC to DC converter.Pino...

SI2302DS Data Sheet

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Part Number:
SI2302DS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TrenchMOS™ technology
 Very fast switching
 Logic level compatible
Subminiature surface mount package.


Application

· Battery management
· High speed switch
· Low power DC to DC converter.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C - 20 V
VGS gate-source voltage (DC)   - ±8 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 2.5 A
Tsp = 70 °C; VGS = 4.5 V; Figure 2 - 2 A
IDM peak drain current Tsp = 25 °C; pulsed; tp £ 10 ms; Figure 3 - 10 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 0.83 W
Tstg storage temperature   -65 +150
Tj operating junction temperature   -65 +150
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C   - 0.7 A



Description

SI2302DS N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
SI2302DS in SOT23.


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