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SI2312DS-T1-E3

MOSFET 20V 3.77A

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SeekIC No. : 00161092 Detail

SI2312DS-T1-E3: MOSFET 20V 3.77A

SI2312DS-T1-E3 Data Sheet

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Part Number:
SI2312DS-T1-E3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.77 A
Resistance Drain-Source RDS (on) : 0.033 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-236-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.033 Ohms
Package / Case : TO-236-3
Continuous Drain Current : 3.77 A


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