SI2333DS-T1-E3, US $ .24-.41 , Vishay/Siliconix, SI2333DS-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00149765 Detail

SI2333DS-T1-E3: MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V

SI2333DS-T1-E3 Data Sheet

US $ .24~.41 / Piece | Get Latest Price

Part Number:: SI2333DS-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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0~1
1~10
10~100
100~250

Unit Price
$.41
$.31
$.28
$.24

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/4/24

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Recent History
What is this?

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Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	12 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	4.1 A
Resistance Drain-Source RDS (on) :	32 mOhms at 4.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-236	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 12 V
Package / Case : TO-236
Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 32 mOhms at 4.5 V

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SI2333DS-T1-E3

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