SI3529DV-T1-GE3, US $ .23-.4 , Vishay/Siliconix, SI3529DV-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00153327 Detail

SI3529DV-T1-GE3: MOSFET 40V 2.2/2.3A 1.4W 125/215mohm @ 10V

SI3529DV-T1-GE3 Data Sheet

US $ .23~.4 / Piece | Get Latest Price

Part Number:: SI3529DV-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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0~1
1~10
10~100
100~250

Unit Price
$.4
$.29
$.27
$.23

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/4/18

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Recent History
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SI3529DV-T1-E3 evaluate
US $.23 - .4 / Piece

MOSFET 40V 2.25/1.76A 1.4W

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	40 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	2.25 A, 1.76 A
Resistance Drain-Source RDS (on) :	0.125 Ohms, 0.215 Ohms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSOP-6	Packaging :	Reel

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : TSOP-6
Continuous Drain Current : 2.25 A, 1.76 A
Resistance Drain-Source RDS (on) : 0.125 Ohms, 0.215 Ohms

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SI3529DV-T1-GE3

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