SI3948DV

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 0.095 Ohms
Continuous Drain Current : 2.5 A
Package / Case : SSOT-26


Features:

·2.5 A, 30 V. R_DS(ON) = 0.095 W @ V_GS = 10 V
R_DS(ON) = 0.145 W @ V_GS = 4.5 V
·Very fast switching.
·Low gate charge (2.1nC typical).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).




Pinout






Specifications

Symbol	Parameter	SI3446DV	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Load Current Continuous - Pulsed	2.5	A
		10
PD	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	0.96	W
		0.9
		0.7
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to 150
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	130	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	60	°C/W

Description

These N-Channel Logic Level MOSFETs SI3948DV are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. SI3948DV is well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

SI3948DV Dual N-Channel 30-V (D-S) Rated MOSFET