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SI4435DYTR

MOSFET P-CH 30V 8A 8-SOIC

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SeekIC No. : 003430815 Detail

SI4435DYTR: MOSFET P-CH 30V 8A 8-SOIC

SI4435DYTR Data Sheet

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Part Number:
SI4435DYTR
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2320pF @ 15V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Current - Continuous Drain (Id) @ 25° C: 8A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds: 2320pF @ 15V


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