MOSFET 30V Dual N/P FET Enhancement Mode
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.9 A, - 3.5 A | ||
| Resistance Drain-Source RDS (on) : | 0.053 Ohms | Configuration : | Dual Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
| Technical/Catalog Information | SI4532DY |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.9A, 3.5A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 235pF @ 10V |
| Power - Max | 900mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SI4532DY SI4532DY SI4532DYDKR ND SI4532DYDKRND SI4532DYDKR |