SI4925BDY-E3

MOSFET 30V 7.1A 2W

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SI4925BDY-E3 Picture
SeekIC No. : 00159888 Detail

SI4925BDY-E3: MOSFET 30V 7.1A 2W

floor Price/Ceiling Price

Part Number:
SI4925BDY-E3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.3 A
Resistance Drain-Source RDS (on) : 25 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Dual
Continuous Drain Current : 5.3 A
Resistance Drain-Source RDS (on) : 25 mOhms
Package / Case : SOIC-8 Narrow


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