Position: Home  > All Categories> Integrated Circuits (ICs) > Si4900DY

Si4900DY

Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C Temperature Range• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristic...

product image

Si4900DY Picture
See larger image
SeekIC No. : 004490372 Detail

Si4900DY: Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C ...

Si4900DY Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
Si4900DY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics


Description

The attached spice model Si4900DY describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network Si4900DY is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Memory Cards, Modules
WT32
VTL5C7
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Tools
TCP202
G084SN05 V.3
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
View more