SI5504BDC-T1-GE3, US $ .29-.66, SI5504BDC-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003429806 Detail

SI5504BDC-T1-GE3: MOSFET N/P-CH 30V 1206-8

SI5504BDC-T1-GE3 Data Sheet

US $ .29~.66 / Piece | Get Latest Price

Part Number:: SI5504BDC-T1-GE3
Mfg:
Supply Ability:: 5000

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Upload time: 2025/12/20

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Si5504BDC evaluate
DescriptionN- and P-Channel 30-V (D-S) MOSFET Si5504BDC
SI5504BDC-T1-E3 evaluate
US $.5 - .81 / Piece

MOSFET 30V 4.0/3.7A
Si5504DC evaluate
PinoutSpecifications Parameter Symbol Channel-1 Channel-2 Unit 5 secs Steady State ...

Product Details

Quick Details

Series:	TrenchFET®	Manufacturer:	Vishay Siliconix
FET Type:	N and P-Channel	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V	Current - Continuous Drain (Id) @ 25° C:	4A, 3.7A
Rds On (Max) @ Id, Vgs:	65 mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) @ Vgs:	7nC @ 10V	Input Capacitance (Ciss) @ Vds:	220pF @ 15V
Power Dissipation :	21 W	Power - Max:	3.12W, 3.1W
Mounting Type:	Surface Mount	Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	1206-8 ChipFET?

Description

Series: TrenchFET®
Manufacturer: Vishay Siliconix
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
Gate Charge (Qg) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) @ Vds: 220pF @ 15V
Current - Continuous Drain (Id) @ 25° C: 4A, 3.7A
Power - Max: 3.12W, 3.1W

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SI5504BDC-T1-GE3

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