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SI5915DC-T1-GE3

MOSFET 2P-CH 8V 3.4A 1206-8

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SeekIC No. : 003429905 Detail

SI5915DC-T1-GE3: MOSFET 2P-CH 8V 3.4A 1206-8

SI5915DC-T1-GE3 Data Sheet

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Part Number:
SI5915DC-T1-GE3
Mfg:
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V Drain Source Voltage VDS : + / - 20 V
Current - Continuous Drain (Id) @ 25° C: 3.4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) @ Vds: - Power - Max: 1.1W
Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?    

Description

Series: TrenchFET®
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Input Capacitance (Ciss) @ Vds: -
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 450mV @ 250µA
Drain to Source Voltage (Vdss): 8V
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?
Power - Max: 1.1W
Current - Continuous Drain (Id) @ 25° C: 3.4A
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V


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