SI6562DQ-T1-GE3, US $ .57-.93 , Vishay/Siliconix, SI6562DQ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146707 Detail

SI6562DQ-T1-GE3: MOSFET N/P-Ch MOSFET 20V 30/50mohm @ 4.5V

SI6562DQ-T1-GE3 Data Sheet

US $ .57~.93 / Piece | Get Latest Price

Part Number:: SI6562DQ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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10~100
100~250

Unit Price
$.93
$.73
$.65
$.57

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15 Days
15 Days
15 Days

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Recent History
What is this?

SI65 evaluate
Features: ·Low profile (4.85mm max. height) SMD type.·Unshielded.·Self-leads, suitable for high de...
SI6542DQ-T1 evaluate
MOSFET 20V 2.5/1.9A
SI6543DQ-T1 evaluate
MOSFET 30V 3.9/2.5A

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	4.5 A, 3.5 A
Resistance Drain-Source RDS (on) :	30 mOhms, 50 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSSOP-8	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Continuous Drain Current : 4.5 A, 3.5 A
Resistance Drain-Source RDS (on) : 30 mOhms, 50 mOhms

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SI6562DQ-T1-GE3

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