MOSFET 200V 5.3A 5.2W 80mohm @ 10V
SI7450DP-T1-GE3: MOSFET 200V 5.3A 5.2W 80mohm @ 10V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5.3 A | ||
| Resistance Drain-Source RDS (on) : | 80 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerPAK SO-8 | Packaging : | Reel |