SI7911DN-T1-GE3, US $ .28-.37 , Vishay/Siliconix, SI7911DN-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156266 Detail

SI7911DN-T1-GE3: MOSFET 20V 5.7A 2.5W 51mohm @ 4.5V

SI7911DN-T1-GE3 Data Sheet

US $ .28~.37 / Piece | Get Latest Price

Part Number:: SI7911DN-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1840
1840~3000
3000~6000
6000~12000

Unit Price
$.37
$.3
$.29
$.28

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2026/5/13

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Recent History
What is this?

Si7900AEDN evaluate
Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 2...
SI7900AEDN-T1-E3 evaluate
US $.69 - 1.12 / Piece

MOSFET 20V 8.5A 1.5W
SI7900AEDN-T1-GE3 evaluate
US $.25 - .34 / Piece

MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	4.2 A
Resistance Drain-Source RDS (on) :	51 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK 1212-8	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : PowerPAK 1212-8
Continuous Drain Current : 4.2 A
Resistance Drain-Source RDS (on) : 51 mOhms

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SI7911DN-T1-GE3

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