MOSFET 20V 2.6A 0.9W 90mOhms @ 4.5V
SI8809EDB-T2-E1: MOSFET 20V 2.6A 0.9W 90mOhms @ 4.5V
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | - 2.6 A | ||
| Resistance Drain-Source RDS (on) : | 0.09 Ohms at - 4.5 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | Micro Foot-4 | Packaging : | Reel |