SI8900EDB-T2-E1, US $ .82-.84 , Vishay/Siliconix, SI8900EDB-T2-E1 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156062 Detail

SI8900EDB-T2-E1: MOSFET 20V 7.0A 1.8W Bi-Directional

SI8900EDB-T2-E1 Data Sheet

US $ .82~.84 / Piece | Get Latest Price

Part Number:: SI8900EDB-T2-E1
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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0~2360
2360~3000
3000~6000

Unit Price
$.84
$.83
$.82

Processing time
15 Days
15 Days
15 Days

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Upload time: 2025/12/25

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Features: · TrenchFET® Power MOSFET· Ultra-Low rSS(on)· ESD Protected: 4000 V· New MICRO FOOT&...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	5.4 A
Resistance Drain-Source RDS (on) :	24 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	Micro Foot-10	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 24 mOhms
Continuous Drain Current : 5.4 A
Package / Case : Micro Foot-10

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SI8900EDB-T2-E1

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