Si8900EDB Selling Leads, Price trend, Si8900EDB DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchFET® Power MOSFET· Ultra-Low rSS(on)· ESD Protected: 4000 V· New MICRO FOOT® Chipscale Packaging ReducesFootprint Area Profile (0.62 mm) and On-ResistancePer Footprint AreaApplication· Battery Protection Circuit- 1-2 Cell Li+/LiP Battery Pack for Portable DevicesSpecifica...

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SeekIC No. : 004490873 Detail

Si8900EDB: Features: · TrenchFET® Power MOSFET· Ultra-Low rSS(on)· ESD Protected: 4000 V· New MICRO FOOT® Chipscale Packaging ReducesFootprint Area Profile (0.62 mm) and On-ResistancePer Footprint Area...

Si8900EDB Data Sheet

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Part Number:: Si8900EDB
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/25

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Recent History
What is this?

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SI8900EDB-T2-E1 evaluate
US $.82 - .84 / Piece

MOSFET 20V 7.0A 1.8W Bi-Directional

Product Details

Description

Features:

· TrenchFET^® Power MOSFET
· Ultra-Low r_SS(on)· ESD Protected: 4000 V
· New MICRO FOOT^®Chipscale Packaging Reduces
Footprint Area Profile (0.62 mm) and On-Resistance
Per Footprint Area

Application

· Battery Protection Circuit
- 1-2 Cell Li+/LiP Battery Pack for Portable Devices

Specifications

Parameter		Symbol	5secs	Steady State	Unit
Source1-Source2 Voltage		V_S1S2	20		V
Gate-Source Voltage		V_GS	±12
Continuous Source1-Source2 Current (T_J = 150)^a	T_A= 25	I_S1S2	7	5.4	A
	T_A = 85		5.1	3.9
Pulsed Source1-Source2 Current		I_SM	10
Maximum Power Dissipation^a	T_A = 25	P_D	1.8	1	W
	T_A= 85		0.9	0.5
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150
Package Reflow Conditions^c	VPR		215
	IR/Convection		220

Description

Bidirectional N-Channel 20-V (D-S) MOSFET
Si8900EDB

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Si8900EDB

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