MOSFET 8.0V 9.0A 13W 52mohm @ 4.5V
SIB417DK-T1-GE3: MOSFET 8.0V 9.0A 13W 52mohm @ 4.5V
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 8 V | ||
| Gate-Source Breakdown Voltage : | +/- 5 V | Continuous Drain Current : | 5.6 A | ||
| Resistance Drain-Source RDS (on) : | 0.052 Ohms | Configuration : | Single Quad Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerPAK SC75-6L | Packaging : | Reel |