SIDC01D120H6

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 600mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 600mA
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Package / Case: Wafer
Supplier Device Package: Sawn on foil


Features:

` 1200V EMCON technology 120 m chip
` soft, fast switching
` low reverse recovery charge
` small temperature coefficient


Application

SMPS, resonant applications, drives


Specifications

Parameter	Symbol	Condition	Value	Unit
Repetitive peak reverse voltage	VRRM		1200	V
Continuous forward current limited by Tjmax	IF		0.6	A
Single pulse forward current (depending on wire bond configuration)	IFSM	tP = 10 ms sinusoidal	tbd
Maximum repetitive forward current limited by Tjmax	IFRM		1.2
Operating junction and storage temperature	Tj, Tstg		-55 ... +150	°C

Description

AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld