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SIDC05D60SIC3

Features: · Worlds first 600V Schottky diode· Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching behavior· Ideal diode for Power Factor Correction· No forward recoveryApplication· SMPS, PFC, snubberSp...

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SeekIC No. : 004491070 Detail

SIDC05D60SIC3: Features: · Worlds first 600V Schottky diode· Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching beh...

SIDC05D60SIC3 Data Sheet

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Part Number:
SIDC05D60SIC3
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· Worlds first 600V Schottky diode
· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· Ideal diode for Power Factor Correction
· No forward recovery


Application

· SMPS, PFC, snubber


Specifications

Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
VRRM
600
V
Non repetitive peak forward current
VRSM
  
600
Continuous forward current limited by
Tjmax
IF
2
 A
Single pulse forward current
(depending on wire bond configuration)
IFSM
TC =25° C, tP =10 ms sinusoidal
4.1
Maximum repetitive forward current
limited by Tjmax
IFRM
TC = 100°C, Tj=150°C,
D=0.1
7.3
Non repetitive peak forward current
IFMAX
TC =25°C, tp=10s
17
Operating junction and storage
temperature
Tj,Tstg
-55...+175
°C



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