SIDC02D60C6

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 600V
Packaging: Bulk
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 6A (DC)
Package / Case: Wafer
Supplier Device Package: Sawn on foil
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 6A
Current - Reverse Leakage @ Vr: 27µA @ 600V


Features:

` 600V EMCON 3 technology 70 m chip
` soft, fast switching
` low reverse recovery charge
` small temperature coefficient


Application

· drives
· white goods
· resonant applications


Specifications

Parameter	Symbol	Condition	Value	Unit
Repetitive peak reverse voltage	VRRM		600	V
Continuous forward current limited by Tjmax	IF		1 )	A
Maximum repetitive forward current limited by Tjmax	IFRM		12
Operating junction and storage temperature	Tj, Tstg		-40...+175	°C

^{1 )} depending on thermal properties of assembly


Description

AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld