SIDC02D60F6

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Surface Mount
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 600V
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Packaging: Bulk
Current - Average Rectified (Io): 3A (DC)
Manufacturer: Infineon Technologies
Package / Case: Wafer
Supplier Device Package: Sawn on foil
Current - Reverse Leakage @ Vr: 27µA @ 600V


Features:

` 600V EMCON technology 70 m chip
` soft , fast switching
` low reverse recovery charge
` small temperature coefficient


Application

SMPS, resonant applications, drives


Specifications

Parameter	Symbol	Condition	Value	Unit
Repetitive peak reverse voltage	VRRM		600	V
Continuous forward current limited by Tjmax	IF		3	A
Single pulse forward current (depending on wire bond configuration)	IFSM	tP = 10 ms sinusoidal	tbd
Maximum repetitive forward current limited byTjmax (depending on wire bond configuration)	IFRM		6
Operating junction and storage temperature	Tj, Tstg		-55 ... +150	°C

Description

AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld