SIGC121T60NR2C

Features of the SIGC121T60NR2C are:(1)600V NPT technology 100m chip;(2)positive temperature coefficient;(3)easy paralleling;(4)integrated gate resistor.

The absolute maximum ratings of the SIGC121T60NR2C can be summarized as:(1):the symbol is VCE,the parameter is collector-emitter voltage,the rating is 600,the unit is V;(2):the symbol is IC,the parameter is DC collector current, limited by Tjmax,the rating is depending on thermal properties of assembly,the unit is A;(3):the symbol is Icpuls,the parameter is pulsed collector current, tp limited by Tjmax,the rating is 450,the unit is A;(4):the symbol is VGE,the parameter is gate emitter voltage,the rating is ±20,the unit is V;(5):the symbol is TJ,Tstg,the parameter is operating junction and storage temperature,the rating is-55 to +150,the unit is .

The electrical characteristics of the SIGC121T60NR2C can be summarized as:(1):the symbol is CISS,the parameter is input capacitance,the rating is 6500,the unit is pF;(2):the symbol is COSS,the parameter is output capacitance,the rating is tbd,the unit is pF;(3):the symbol is Crss,the parameter is reverse transfer capacitance,the rating is 600,the unit is pF.