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Features: ` 600V NPT technology` 100m chip` positive temperature coefficient` easy parallelingApplicationdrivesSpecifications Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C VCE 600 V DC collector current, limited by Tjmax IC 1 ) A Pulsed co...

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SIGC12T60NC: Features: ` 600V NPT technology` 100m chip` positive temperature coefficient` easy parallelingApplicationdrivesSpecifications Parameter Symbol Value Unit Collector-emitter voltage, ...

SIGC12T60NC Data Sheet

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Part Number:: SIGC12T60NC
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/25

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Product Details

Description

Features:

` 600V NPT technology
` 100m chip
` positive temperature coefficient
` easy paralleling

Application

drives

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage, T_j=25 °C	V_CE	600	V
DC collector current, limited by T_jmax	I_C	^{1 )}	A
Pulsed collector current, t_p limited by T_jmax	I_cpuls	30	A
Gate emitter voltage	V_GE	±20	V
Operating junction and storage temperature	T_j, T_stg	-55 ... +150	°C

^{1 )} depending on thermal properties of assembly

Description

AQL 0,65 for visual inspection according to failure catalog
SIGC12T60NC Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld

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SIGC12T60NC

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