SIGC156T120R2CS Selling Leads, Price trend, SIGC156T120R2CS DataSheet download, circuit diagram from SeekIC.com

Features: ` 1200V NPT technology 175m chip` low turn-off losses` short tail current` positive temperature coefficient` easy paralleling` integrated gate resistorApplicationdrives, SMPS, resonant applicationsSpecifications Parameter Symbol Value Unit Collector-emitter voltage, Tj=2...

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SIGC156T120R2CS: Features: ` 1200V NPT technology 175m chip` low turn-off losses` short tail current` positive temperature coefficient` easy paralleling` integrated gate resistorApplicationdrives, SMPS, resonant app...

SIGC156T120R2CS Data Sheet

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Part Number:: SIGC156T120R2CS
Supply Ability:: 5000

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Upload time: 2025/12/25

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Product Details

Description

Features:

` 1200V NPT technology 175m chip
` low turn-off losses
` short tail current
` positive temperature coefficient
` easy paralleling
` integrated gate resistor

Application

drives, SMPS, resonant applications

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage, T_j=25 °C	V_CE	1200	V
DC collector current, limited by T_jmax	I_C	^{1 )}	A
Pulsed collector current, t_p limited by T_jmax	I_cpuls	300	A
Gate emitter voltage	V_GE	±20	V
Operating junction and storage temperature	T_j, T_stg	-55 ... +150	°C

^{1 )} depending on thermal properties of assembly

Description

AQL 0,65 for visual inspection according to failure catalog
SIGC156T120R2CS Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld

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SIGC156T120R2CS

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