SIGC156T60NR2C

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : Die


Features:

` 600V NPT technology
` 100m chip
` short circuit prove
` positive temperature coefficient
` easy paralleling


Application

drives


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage, Tj=25 °C	VCE	600	V
DC collector current, limited by Tjmax	IC	1 )	A
Pulsed collector current, tp limited by Tjmax	Icpuls	600	A
Gate emitter voltage	VGE	±20	V
Operating junction and storage temperature	Tj, Tstg	-55 ... +150	°C

^{1 )} depending on thermal properties of assembly

Description

AQL 0,65 for visual inspection according to failure catalog
SIGC156T60NR2C Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld