SIGC158T120R3L

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :


Features:

` 1200V Trench + Field Stop technology
` 120m chip
` low turn-off losses
` short tail current
` positive temperature coefficient
` easy paralleling


Application

drives


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage, Tj=25 °C	VCE	1200	V
DC collector current, limited by Tjmax	IC	1 )	A
Pulsed collector current, tp limited by Tjmax	Icpuls	450	A
Gate emitter voltage	VGE	±20	V
Operating junction and storage temperature	Tj, Tstg	-55 ... +150	°C

^{1 )} depending on thermal properties of assembly


Description

AQL 0,65 for visual inspection according to failure catalog
SIGC158T120R3L Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld