Features: ` 1200V NPT technology` 180m chip` short circuit prove` positive temperature coefficient` easy parallelingApplication· drives, SMPS, resonant applicationsSpecifications Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °CDC collector current, limited by TjmaxPulse...
SIGC16T120CS: Features: ` 1200V NPT technology` 180m chip` short circuit prove` positive temperature coefficient` easy parallelingApplication· drives, SMPS, resonant applicationsSpecifications Parameter Sy...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · 600V Trench & Field Stop technology· low VCE(sat)· low turn-off losses· short tail...
Features: ` 1200V NPT technology` 180m chip` short circuit prove` positive temperature coefficient...
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature |
VCE IC I cpuls VGE Tj, Ts t g |
1200 1 ) 24 ±20 -55 ... +150 |
V A A V °C |