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SIGC25T120C

Features: ` 1200V NPT technology` 200m chip` positive temperature coefficient` easy parallelingApplicationdrivesSpecifications Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C VCE 1200 V DC collector current, limited by Tjmax IC 1 ) A Pulsed ...

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SIGC25T120C: Features: ` 1200V NPT technology` 200m chip` positive temperature coefficient` easy parallelingApplicationdrivesSpecifications Parameter Symbol Value Unit Collector-emitter voltage,...

SIGC25T120C Data Sheet

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Part Number:
SIGC25T120C
Supply Ability:
5000

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Product Details

Description



Features:

` 1200V NPT technology
` 200m chip
` positive temperature coefficient
` easy paralleling


Application

drives


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
VCE
1200
V
DC collector current, limited by Tjmax
IC
1 )
A
Pulsed collector current, tp limited by Tjmax
Icpuls
45
A
Gate emitter voltage
VGE
±20
V
Operating junction and storage temperature
Tj, Tstg
-55 ... +150
°C


1 ) depending on thermal properties of assembly




Description

AQL 0,65 for visual inspection according to failure catalog
SIGC25T120C Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld


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