Features: ` low Eoff` 600V NPT technology` 100m chip` short circuit prove` positive temperature coefficient` easy parallelingApplication· Welding· PFC· UPSSpecifications Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °CDC collector current, limited by TjmaxPulsed collect...
SIGC25T60UN: Features: ` low Eoff` 600V NPT technology` 100m chip` short circuit prove` positive temperature coefficient` easy parallelingApplication· Welding· PFC· UPSSpecifications Parameter Symbol Val...
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Features: · 600V Trench & Field Stop technology· low VCE(sat)· low turn-off losses· short tail...
Features: ` 1200V NPT technology` 180m chip` short circuit prove` positive temperature coefficient...
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature |
VCE IC I cpuls VGE Tj, Ts t g |
600 1 ) 90 ±20 -55 ... +150 |
V A A V °C |