SIZ710DT

The SIZ710DT is designed as one kind of N-channel 20-V (D-S) MOSFET device that can be used in (1)Notebook System Power; (2)POL; (3)Synchronous Buck Converter applications. And this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET?Power MOSFETs; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SIZ710DT can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-20 V;(3)Pulsed Drain Current: 80 A;(4)Single Pulse Avalanche Current: 30 mJ;(5)Avalanche Energy: 45 mJ;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 24.1 mV/;(3)VGS(th) Temperature Coefficient: -7.1 mV/;(4)Gate-Source Threshold Voltage: 1.5 to 3.0 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 25 A;(7)Forward Transconductance: 90 S. If you want to know more information about the SIZ710DT, please download the datasheet in www.seekic.com or www.chinaicmart.com.