SKCD18C120IHD

The SKCD18C120IHD (IF =25A, VRRM =1200 V, Size: 4,2mm X4,2 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V, optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior
small switching losses, high ruggedness, compatible to thick wire bonding
compatible to all standard solder processes, SKCD18C120IHD is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.

The absolute maximum ratings of SKCD18C120IHD are VRRM(@ Tvj =25, IR = 0,1mA)=1200V, IF(AV)(@ 80, Tvjmax=150)=20 A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=270A/250A, Tvjmax=+150.

The electrical characteristics of SKCD18C120IHD are I2t(@ Tvjmax, 10 ms, half sine wave)=200(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1 mA(max)/2mA(max), VF(@ Tvj =25, IF=20A)/(@ Tvj =125, IF=20A)=1,5(TYP)V/1,5(TYP)V, V(TO)(@ Tvj =125)=0,92V, rT(@ Tvj =125)=27,7m.

And the thermal characteristics of SKCD18C120IHD are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=1, 47(typ)K/W.

The Mechanical Characteristics of SKCD18C120IHD are raster size(4,2*4,2mm), Area total(17, 64mm2), Chips/wafer=578(pcs), Anode metallisation(bendable (AI)),  Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).

This technical information about SKCD18C120IHD specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.