Features: • SKHI 23/12 drives all SEMIKRON IGBTs with VCES up to 1200 V (VCE-monitoring adjusted from factory for 1200 V-IGBT)• Double driver circuit for medium power IGBTs, also as two independent single drivers• CMOS / TTL (HCMOS) compatible input buffers• Short circuit p...
SKHI12: Features: • SKHI 23/12 drives all SEMIKRON IGBTs with VCES up to 1200 V (VCE-monitoring adjusted from factory for 1200 V-IGBT)• Double driver circuit for medium power IGBTs, also as two ...
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Features: SpecificationsDescriptionThe SKHI 10/12 is designed as one kind of high power IGBT drive...
Features: SpecificationsDescriptionThe SKHI 22A/B is designed as one kind of hybrid dual IGBT driv...
Features: SpecificationsDescriptionThe SKHI 22A/B(R) is designed as one kind of hybrid dual IGBT d...
• SKHI 23/12 drives all SEMIKRON IGBTs with VCES up to 1200 V (VCE-monitoring adjusted from factory for 1200 V-IGBT)
• Double driver circuit for medium power IGBTs, also as two independent single drivers
• CMOS / TTL (HCMOS) compatible input buffers
• Short circuit protection by VCE monitoring
• Soft short circuit turn-off
• Isolation due to transformers (no opto couplers)
• Supply undervoltage monitoring (< 13 V)
• Error memory / ouput signal (LOW or HIGH logic)
• Driver interlock top / bottom
• Internal isolated power supply
|
Symbol |
Conditions |
Values |
Units |
|
VS |
Supply voltage primary |
18 |
V |
|
ViH |
Input signal voltage (HIGH) (for 15 V and 5 V input level) |
VS + 0.3 |
V |
|
IoutPEAK |
Output peak current |
± 8 |
A |
|
IoutAV |
Output average current |
±50 |
mA |
|
VCE |
Collector emitter voltage sense |
1200 |
V |
|
dv/dt |
Rate of rise and fall of voltage (secondary to primary side) |
75 |
KV/s |
|
Visol IO |
Isolation test volt. IN-OUT (2 sec. AC) |
2500 |
V |
|
RGon min |
minimal RGon |
2.7 |
|
|
RGoff min |
minimal RGoff |
2.7 |
|
|
Qout/pulse |
charge per pulse |
4.8 |
C |
|
Top |
Operating temperature |
- 25 ... + 85 |
°C |
|
Tstg |
Storage temperature |
- 25 ... + 85 |
°C |