SKM75GB173D

The SKM75GB173D is designed as one kind of Trench IGBT module, SKM75GB173D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (10 mm) and creepage distances (20 mm).

Also SKM75GB173D can be used in wide range of applications such as (1)AC inverter drives on mains 575 - 750 VAC;(2)DC bus voltage 750 - 1200 VDC;(3)public transport;(4)switching (not for linear use). The absolute maximum ratings of the SKM75GB173D can be summarized as:(1)V CES: 1700 V;(2)Ic: 75 (50) A;(3)I CRM: 100 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 4000 V;(7)I F: 60 (40) A;(8)I FRM: 100 A;(9)I FSM: 550.

The electrical characteristics of SKM75GB173D can be summarized as:(1)VGE(th): 4.8 to 6.2 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.65 to 1.9 V;(4)rCE: 35 to 40 m;(5)VCE(sat): 3.4 to 3.9 V;(6)Cies: 8 nF;(7)Coes: 0.64 nF;(8)Cres: 0.25 nF;(9)LCE: 30 nH;(10)Rcc+ee: 0.75 m. If you want to know more information such as the electrical characteristics about the SKM75GB173D, please download the datasheet in www.seekic.com or www.chinaicmart.com.