SKM75GD123D

The SKM75GD123D is designed as one kind of Trench IGBT module, SKM75GD123D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (9 mm) and creepage distances (13 mm).

Also SKM75GD123D can be used in wide range of applications such as (1)switchd mode power supplies;(2)DC servo and robot drives;(3)three phase inverters for AC motor speed control;(4)switching (not for linear use). The absolute maximum ratings of the SKM75GD123D can be summarized as:(1)V CES: 1200 V;(2)Ic: 75 (50) A;(3)I CRM: 100 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 2500 V;(7)I F: 75 (50) A;(8)I FRM: 100 A;(9)I FSM: 550.

The electrical characteristics of SKM75GD123D can be summarized as:(1)VGE(th): 4.5 to 6.5 V;(2)I CES: 0.4 to 1.2 mA;(3)VCE(TO): 1.4 to 1.6 V;(4)rCE: 22 to 28 m;(5)VCE(sat): 2.5 to 3.0 V;(6)Cies: 3.3 to 4.3 nF;(7)Coes: 0.5 to 0.6 nF;(8)Cres: 0.22 to 0.3 nF;(9)LCE: 60 nH;(10)Rcc+ee: - m. If you want to know more information such as the electrical characteristics about the SKM75GD123D, please download the datasheet in www.seekic.com or www.chinaicmart.com.