Position: Home  > All Categories> Integrated Circuits (ICs) > SKW20N60HS

SKW20N60HS

IGBT Transistors HIGH SPEED NPT TECH 600V 20A

product image

SKW20N60HS Picture
See larger image
SeekIC No. : 00142843 Detail

SKW20N60HS: IGBT Transistors HIGH SPEED NPT TECH 600V 20A

SKW20N60HS Data Sheet

floor Price/Ceiling Price

US $ 2.21~3.35 / Piece | Get Latest Price
Part Number:
SKW20N60HS
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.35
  • $2.99
  • $2.45
  • $2.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 s
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
36
20
A
Pulsed collector current, tp limited by Tjmax
ICpuls
80
Turn off safe operating area
VCE 600V, Tj 150°C
-
80
Diode forward current
TC = 25°C
TC = 100°C
IF
40
20
Diode pulsed current, tp limited by Tjmax
IFpuls
80
Gate-emitter voltage
VGE
±20
±30
V
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
s
Power dissipation
TC = 25°C
Ptot
178
W
Operating junction and storage temperature
Tj,Tstg
-55~+150
°C
Time limited operating junction temperature for t < 150h
Tj(tl)
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Cable Assemblies
CS1W-CN114
XW2Z-500T
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
View more