Position: Home  > All Categories> Integrated Circuits (ICs) > SKW25N120

SKW25N120

IGBT Transistors FAST IGBT NPT TECH 1200V 25A

product image

SKW25N120 Picture
See larger image
SeekIC No. : 00143341 Detail

SKW25N120: IGBT Transistors FAST IGBT NPT TECH 1200V 25A

SKW25N120 Data Sheet

floor Price/Ceiling Price

US $ 3.31~4.53 / Piece | Get Latest Price
Part Number:
SKW25N120
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~130
  • 130~250
  • 250~500
  • 500~1000
  • Unit Price
  • $4.53
  • $4.17
  • $3.8
  • $3.31
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Features:

• 40lower Eoff compared to previous generation
• Short circuit withstand time - 10 s
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25°C
TC = 100°C
IC
46
25
A
Pulsed collector current, tp limited by Tjmax
ICpuls
84
Turn off safe operating area
VCE 600V, Tj 150°C
-
84
Diode forward current
TC = 25°C
TC = 100°C
IF
42
25
Diode pulsed current, tp limited by Tjmax
IFpuls
80
Gate-emitter voltage
VGE

±20
 
V
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
s
Power dissipation
TC = 25°C
Ptot
313
W
Operating junction and storage temperature
Tj,Tstg
-55~+150
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Ts
260



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Cable Assemblies
CS1W-CN114
XW2Z-500T
Prototyping Products
AVT4168
DE1
View more