DescriptionThe SL3500LX21 is a kind of alloy-free light trigger thyristor. The device is intended for high power control applications. There are some features as follows:(1)repetitive peak off-state voltage: VDRM=8000V; (2)repetitive peak reverse voltage: VRRM=8000V; (3)average on-state current: I...
SL3500LX21: DescriptionThe SL3500LX21 is a kind of alloy-free light trigger thyristor. The device is intended for high power control applications. There are some features as follows:(1)repetitive peak off-state...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The SL3500LX21 is a kind of alloy-free light trigger thyristor. The device is intended for high power control applications. There are some features as follows:(1)repetitive peak off-state voltage: VDRM=8000V; (2)repetitive peak reverse voltage: VRRM=8000V; (3)average on-state current: IT(AV)=3500A; (4)light trigger power: PLT=8mW(Max.); (5)turn-off time:tq=400s(Max.); (6)critical rate of rise of on-state current: dv/dt=200A/s; (7)critical rate of rise of off-state voltage:dv/dt=2300V/s; (8)flat package.
The following is about the SL3500LX21 absolute maximum ratings: (1)repetitive peak off-state voltage, VDRM: 8000 V; (2)repetitive peak reverse voltage, VRRM: 8800 V; (3)non-repetitive peak reverse voltage, VRSM (non-repetitive5 ms, Tj=0 to 115): 8800 V; (4)RMS on-state current, IT(RMS): 5498 A; (5)average on-state current, IT(AV): 3500 A; (6)peak one cycle surge on-state current (non-repetitive): ITSM: 60000 A (50 Hz) and 65000 A (60 Hz); (7)critical rate of rise of on-state current, di/dt: 200 A/s; (8)junction temperature, Tj: -40 to 120; (9)storage temperature, Tstg: -40 to 120.
The last one is about the SL3500LX21 electrical characteristics: (1)repetitive peak off-state current and repetitive peak reverse current, IDRM, IRRM: 700 mA when VDRM=VRRM=rate, Tj=120; (2)peak on-state voltage, VTM: 2.7 V max at ITM=2800 A, Tj=25; (3)light trigger power, PLT: 8 mW at VD=12 V, RL=6, Tj=25; (4)delay time, td: 4s max at VD=1/2 rated, Tj=25, PL=24 mW; (5)gate turn-on time, tgt: 10s max at VD=1/2 rated, Tj=25, PL=24 mW; (6)critical rate of rise of on-state voltage, dv/dt: 2300 V/s min at VDRM=1/2 rated, Tj=90, gate open, exponential rise; (7)thermal resistance (junction to case), Rth(j-c), DC: 0.0035/W max.