Features: • LOW NOISE: 3.5 dB (TYP.)• HIGH EFFICIENCY: 15 mA (TYP.) @ +5 Volts• GOOD DYNAMIC RANGE: 102.5 dB (TYP.) in 1 MHz BW• LOW VSWR: <1.5:1 (TYP.)Specifications Parameter AbsoluteMaximum Storage Temperature 62ºC to +125ºC Case Temperature +1...
SMA16-2: Features: • LOW NOISE: 3.5 dB (TYP.)• HIGH EFFICIENCY: 15 mA (TYP.) @ +5 Volts• GOOD DYNAMIC RANGE: 102.5 dB (TYP.) in 1 MHz BW• LOW VSWR: <1.5:1 (TYP.)Specifications ...
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| Parameter | Absolute Maximum |
| Storage Temperature | 62ºC to +125ºC |
| Case Temperature | +125ºC |
| DC Voltage | +8 V |
| Continuous Input Power | +13 dBm |
| Short Term Input power 1 minute max.) |
50 mW |
| Peak Power (3 Fsec max.) | 0.5 W |
| "S" Series Burn-In Temperature (case) |
+125ºC |
The A16-2 RF amplifier SMA16-2 is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability.
SMA16-2's single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling.Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.