SMA540B

DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Packaging :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SOT-323
Emitter- Base Voltage VEBO : 1.5 V
Maximum Operating Temperature : + 85 C
Maximum DC Collector Current : 0.4 A
Collector- Emitter Voltage VCEO Max : 4.5 V


Features:

• HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz
• CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR
• OPEN COLLECTOR OUTPUT
• TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V
• TRANSITION FREQUENCY 42 GHz
• ULTRA MINIATURE SOT323-4L PACKAGE (LEAD FREE)


Application

• WIDEBAND APPLICATIONS
• CELLULAR AND CORDLESS TELEPHONES
• HIGH FREQUENCY OSCILLATORS


Pinout




Specifications

Symbol	Parameter	Ratings	Unit
Vceo	Collector emitter voltage	4.5	V
Vebo	Emitter base voltage	1.5	V
IC	Collector current	4 0	mA
Ib	Base current	4	mA
IBIAS	BIAS Current	4	mA
Ptot	Total dissipation, Ts = 107	120	mW
Top	Operating temperature	-40 to +85
Tstg	Storage temperature	-65 to +150
Tj	JMax. operating junction temperature	150

Description

The SMA540B is a NPN Transistor integrating a current mirror as biasing. In this way the IC (collector current) can be controlled setting the current at Bias pin according to IC = 10 * IBIAS. The IBIAS current is easy adjustable using an external resistor. It is housed in ultra miniature SOT323-4L  package(LEAD FREE), the relative dimensions are
1.15mmx1.8mm with 0.8mm thickness.