Features: · High breakdown voltage· Low collector-emitter saturation voltage· Complementary type: SMBTA 56M (PNP)Specifications Parameter Symbol Values Unit Collector-emitter voltage VCE0 80 V Collector-base voltage VCB0 80 V Emitter-base voltage ...
SMBTA 06M: Features: · High breakdown voltage· Low collector-emitter saturation voltage· Complementary type: SMBTA 56M (PNP)Specifications Parameter Symbol Values Unit Collector-emit...
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Features: · High DC current gain: 0.1 mA to 500 mA· Low collector-emitter saturation voltage· Comp...
| Parameter |
Symbol |
Values
|
Unit |
| Collector-emitter voltage |
VCE0 |
80 |
V |
| Collector-base voltage |
VCB0 |
80 |
V |
| Emitter-base voltage |
VEB0 |
4 |
V |
| Collector current |
IC |
500 |
mA |
| Peak collector current |
ICM |
1 |
A |
| Base current |
IB |
100 |
mA |
| Peak base current |
IBM |
200 |
mA |
| Total power dissipation, TS 95 °C |
Ptot |
1 |
mW |
| Junction temperature |
Tj |
150 |
°C |
| Storage temperature range |
Tstg |
65 . + 150 |
°C |
| Junction - ambient1) |
Rth JA |
110 |
K/W |
| Junction - soldering point |
Rth JS |
55 |
K/W |