Features: · High DC current gain: 0.1mA to 100mA· Low collector-emitter saturation voltage· Two ( galvanic) internal isolated Transistors with high matching in one package· Complementary type: SMBT 3904S (NPN)Specifications Parameter Symbol Values Unit Collector-emitter vo...
SMBT 3906S: Features: · High DC current gain: 0.1mA to 100mA· Low collector-emitter saturation voltage· Two ( galvanic) internal isolated Transistors with high matching in one package· Complementary type: SMBT ...
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Features: · High DC current gain: 0.1 mA to 500 mA· Low collector-emitter saturation voltage· Comp...
| Parameter |
Symbol |
Values
|
Unit
|
| Collector-emitter voltage |
VCE0 |
40 |
V |
| Collector-base voltage |
VCB0 |
40 |
V |
| Emitter-base voltage |
VEB0 |
6 |
V |
| DC Collector current |
IC |
200 |
mA |
| Total power dissipation, TS = 115 °C |
Ptot |
250 |
mW |
| Junction temperature |
Tj |
150 |
°C |
| Storage temperature range |
Tstg |
65 . + 150 |
°C |
| Junction - ambient1) |
Rth JA |
275 |
K/W |
| Junction - soldering point |
Rth JS |
140 |
K/W |