SML40B27 Selling Leads, Price trend, SML40B27 DataSheet download, circuit diagram from SeekIC.com

Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular TO247 PackageSpecifications VDSS Drain Source Voltage 400 V ID Continuous Drain Current 27 A IDM Pulsed Drain Current 1 108 A VGS Gate Source Vo...

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SeekIC No. : 004495220 Detail

SML40B27: Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular TO247 PackageSpecifications VDSS Drain Source Voltage 400 V ID Continuous...

SML40B27 Data Sheet

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Part Number:: SML40B27
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Description

Features:

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO247 Package

Specifications

V_DSS	Drain Source Voltage	400	V
I_D	Continuous Drain Current	27	A
I_DM	Pulsed Drain Current ¹	108	A
V_GS	Gate Source Voltage	±20	V
V_GSM	Gate Source Voltage Transient	±30	V
P_D	Total Power Dissipation @ Tc_ase = 25°C	280	W
P_D	Derate Linearly	2.24	W/°C
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to 150	°C
T_L	Lead Temperature : 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current1 (Repetitive and Non-Repetitive)	27	A
E_AR	Repetitive Avalanche Energy ¹	30	mJ
E_AS	Single Pulse Avalanche Energy ²	1210	mJ

Description

StarMOS SML40B27 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML40B27 also achieves faster switching speeds through optimised gate layout.

SML40B27

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