Features: • Faster Switching• Lower Leakage• TO3 Hermetic PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 18.5 A IDM Pulsed Drain Current 1 74 A VGS Gate Source Voltage ±30 V VGSM ...
SML50A19: Features: • Faster Switching• Lower Leakage• TO3 Hermetic PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 18.5 A ...
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Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
|
VDSS |
Drain Source Voltage |
500 |
V |
|
ID |
Continuous Drain Current |
18.5 |
A |
|
IDM |
Pulsed Drain Current 1 |
74 |
A |
|
VGS |
Gate Source Voltage |
±30 |
V |
|
VGSM |
Gate Source Voltage Transient |
±40 |
V |
|
PD |
Total Power Dissipation @ Tcase = 25°C |
200 |
W |
|
PD |
Derate Linearly |
1.6 |
W/°C |
|
TJ , TSTG |
Operating and Storage Junction Temperature Range |
55 to 150 |
°C |
|
TL |
Lead Temperature : 0.063" from Case for 10 Sec. |
300 |
°C |
|
IAR |
Avalanche Current1 (Repetitive and Non-Repetitive) |
18.5 |
A |
|
EAR |
Repetitive Avalanche Energy 1 |
30 |
mJ |
|
EAS |
Single Pulse Avalanche Energy 2 |
1210 |
mJ |
StarMOS SML50A19 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML50A19 also achieves faster switching speeds through optimised gate layout